Samsung essentially confirms 1TB Galaxy S10+ with new memory chip


Samsung also envisions the higher storage capacity enabling smartphones to function more like a traditional PC.

Samsung Electronics has today announced that it has begun to mass-produce the industry's first 1 Terabyte eUFS 2.1 storage chip, which will be used in the next generation of mobile devices.

The storage chips will be able to save and load files faster than the company's current chips and will be nearly double the size of its current largest.

This amount of storage will allow users to keep up to 240 4K UHD videos that are 10 minutes long each on their smartphone.

In a statement, the company said this meant that smartphone users would soon be able to have storage capacity similar to that on a premium laptop, with no need to add memory cards to their phones.

More news: Meghan Markle Writes Personal Notes to Women in Need While Volunteering
More news: Monaco swap Tielemans for Leicester's Silva
More news: Moscow 'sends $1.2bn in gold' to aid Venezuela's Maduro

Smartphone manufacturers are looking to find an edge in an increasingly crowded market, promising sleek devices with better cameras and more battery life.

Samsung says that the new chips will make the use of the next generation of smartphones more relative to notebooks. The chip promises speeds of up to 1,000 MB/s which is nearly twice the sequential read speed of a conventional 2.5-inch SATA SSD.

Samsung's upcoming flagship devices, such as the S10, will most likely come with a 1TB option thanks to its new eUFS technology. With such speed, Samsung claims that you can offload 5GB worth of full HD videos to an NVMe SSD as quick as 5 seconds. The 1TB chip may also give Samsung an advantage in high-end phones, such as the Galaxy S10 that's set to unveil on February 20, per ZDNet. There's also 58,000 IOPS in random read speeds while 50,000 IOPS for 50,000 random writes that is up from 42K and 40K IOPS, respectively, from the 512GB eUFS 2.1 chips.

The company said it plans to expand the production of its fifth-generation 512Gb "V-NAND" chip at its Pyeongtaek plant in South Korea throughout the first half of 2019 to fully address the anticipated strong demand.